Integrated circuit package substrate

ABSTRACT

Embodiments of the present disclosure are directed towards techniques and configurations for dual surface finish package substrate assemblies. In one embodiment a method includes depositing a first lamination layer on a first side of a package substrate and a first surface finish on one or more electrical contacts disposed on a second side of the package substrate; removing the first lamination layer from the first side of the package substrate; depositing a second lamination layer on the second side of the package substrate and a second surface finish on the one or more electrical contacts disposed on the first side of the package substrate; and removing the second lamination layer from the second side of the package substrate. Other embodiments may be described and/or claimed.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.15/813,866, filed Nov. 15, 2017, entitled “INTEGRATED CIRCUIT PACKAGESUBSTRATE”, which is a continuation of U.S. application Ser. No.15/260,099, filed Sep. 8, 2016, entitled “INTEGRATED CIRCUIT PACKAGESUBSTRATE”, now U.S. Pat. No. 9,831,169, which is a divisional of U.S.application Ser. No. 14/368,721, filed Jun. 25, 2014, entitled“INTEGRATED CIRCUIT PACKAGE SUBSTRATE”, now U.S. Pat. No. 9,508,636,issued Nov. 29, 2016, which is a national phase entry under 35 U.S.C. §371 of International Application No. PCT/US2013/065246, filed Oct. 16,2013, entitled “INTEGRATED CIRCUIT PACKAGE SUBSTRATE”, which designated,among the various States, the United States of America. TheSpecifications of the PCT/US2013/065246, U.S. patent Ser. Nos.14/368,721, 15/260,099, and 15/813,866 Applications are herebyincorporated by reference.

FIELD

Embodiments of the present disclosure generally relate to the field ofintegrated circuits, and more particularly, to techniques andconfigurations for surface finishes of integrated circuit packagesubstrates.

BACKGROUND

The input/output density of dies, such as processors, is continuallyincreasing. In order to keep up with the increasing input/outputdensities the package substrates to which the dies are attached mustalso scale correspondingly. Under the current state of the art, a singlesurface finish is applied to both a die and a land side of a packagesubstrate. The die side of a package substrate is the side on which adie attaches, while the land side of a package substrate attaches to acircuit board. The single surface finish may grow, or expand, laterallyafter application which may cause pad-to-pad bridging on the die side ofthe substrate if the pads are located too closely together. As a result,the expansion of the surface finish on the die side limits thescalability of the package substrate. The surface finish composition onthe land side, however, may be dictated based upon considerationsrelated to circuit board connection requirements. These considerationsdo not necessarily extend to the die side connection requirements;however, under the current state of the art the same surface finish isapplied to both the die side and the land side of the package substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example and not by wayof limitation in the figures of the accompanying drawings.

FIG. 1 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly, in accordance with some embodiments.

FIG. 2 is an illustrative flow diagram of a package substratefabrication process utilizing dual surface finish in accordance with anembodiment of the present disclosure.

FIG. 3 is an illustrative cross-sectional view of selected operationsillustrating stages in the package substrate fabrication processdescribed in FIG. 2, in accordance with an embodiment of the presentdisclosure.

FIG. 4 is an illustrative flow diagram of an assembly process utilizinga package substrate with dual surface finish in accordance with anembodiment of the present disclosure.

FIG. 5 schematically illustrates a computing device that includes apackage substrate having a dual surface finish, in accordance with someembodiments.

DETAILED DESCRIPTION

Embodiments of the present disclosure describe techniques andconfigurations for dual surface finish package substrate assemblies. Inthe following description, various aspects of the illustrativeimplementations will be described using terms commonly employed by thoseskilled in the art to convey the substance of their work to othersskilled in the art. However, it will be apparent to those skilled in theart that embodiments of the present disclosure may be practiced withonly some of the described aspects. For purposes of explanation,specific numbers, materials and configurations are set forth in order toprovide a thorough understanding of the illustrative implementations.However, it will be apparent to one skilled in the art that embodimentsof the present disclosure may be practiced without the specific details.In other instances, well-known features are omitted or simplified inorder not to obscure the illustrative implementations.

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, wherein like numeralsdesignate like parts throughout, and in which is shown by way ofillustration embodiments in which the subject matter of the presentdisclosure may be practiced. It is to be understood that otherembodiments may be utilized and structural or logical changes may bemade without departing from the scope of the present disclosure.Therefore, the following detailed description is not to be taken in alimiting sense, and the scope of embodiments is defined by the appendedclaims and their equivalents.

For the purposes of the present disclosure, the phrase “A and/or B”means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The description may use perspective-based descriptions such astop/bottom, in/out, over/under, and the like. Such descriptions aremerely used to facilitate the discussion and are not intended torestrict the application of embodiments described herein to anyparticular orientation.

The description may use the phrases “in an embodiment,” or “inembodiments,” which may each refer to one or more of the same ordifferent embodiments. Furthermore, the terms “comprising,” “including,”“having,” and the like, as used with respect to embodiments of thepresent disclosure, are synonymous.

The term “coupled with,” along with its derivatives, may be used herein.“Coupled” may mean one or more of the following. “Coupled” may mean thattwo or more elements are in direct physical or electrical contact.However, “coupled” may also mean that two or more elements indirectlycontact each other, but yet still cooperate or interact with each other,and may mean that one or more other elements are coupled or connectedbetween the elements that are said to be coupled with each other. Theterm “directly coupled” may mean that two or more elements are in directcontact.

In various embodiments, the phrase “a first feature formed, deposited,or otherwise disposed on a second feature,” may mean that the firstfeature is formed, deposited, or disposed over the second feature, andat least a part of the first feature may be in direct contact (e.g.,direct physical and/or electrical contact) or indirect contact (e.g.,having one or more other features between the first feature and thesecond feature) with at least a part of the second feature.

As used herein, the term “module” may refer to, be part of, or includean Application Specific Integrated Circuit (ASIC), an electroniccircuit, a system-on-chip (SoC), a processor (shared, dedicated, orgroup) and/or memory (shared, dedicated, or group) that execute one ormore software or firmware programs, a combinational logic circuit,and/or other suitable components that provide the describedfunctionality.

FIG. 1 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly 100 configured to use a dual surfacefinish on electrical routing features embedded in package substrate 104.In some embodiments, the IC assembly 100 may include one or more dies(e.g., dies 102 a or 102 b) electrically and/or physically coupled withpackage substrate 104, as can be seen. The package substrate 104 mayfurther be electrically coupled with a circuit board 122, as can beseen. As used herein, the die side of a package substrate is the side onwhich the die attaches (e.g., side S1), while the land side of a packagesubstrate is the side that attaches to the circuit board (e.g., sideS2). In some embodiments, the IC assembly 100 may refer only to thepackage substrate 104.

According to various embodiments, a first surface finish may be disposedon electrical routing features, such as one or more lands, on side S2 ofpackage substrate 104. A second surface finish may be disposed onelectrical routing features of side S1 as described herein (e.g.,surface finish 322 of FIG. 3). The second surface finish may beconfigured in the IC assembly 100 to route electrical signals of dies102 a and/or 102 b through various components of the IC assembly 100.The electrical signals may include, for example, input/output (I/O)signals, radio frequency (RF) signals or power/ground associated withoperation of dies 102 a and/or 102 b. This second surface finish mayhave a different chemical composition than the first surface finish. Forexample, while the first surface finish may be nickel-based, the secondsurface finish may, in some embodiments, be gold-based, such as thatapplied using a direct immersion gold (DIG) process.

Dies 102 a and 102 b can be attached to the package substrate 104according to a variety of suitable configurations including, a flip-chipconfiguration, as depicted, or other configurations such as, forexample, being embedded in the package substrate 104 or being configuredin a wirebonding arrangement. In the flip-chip configuration, one orboth of dies 102 a or 102 b may be attached to a surface of the packagesubstrate 104 having the second surface finish using die interconnectstructures 106 such as bumps, pillars, or other suitable structures thatmay also electrically couple dies 102 a and 102 b with the packagesubstrate 104. This second surface finish may, as discussed furtherbelow, enable the die interconnect structures 106 to be spaced moreclosely together than would be possible using a single surface finish onboth of sides S1 and S2 of package substrate 104 and thereby allow forincreased input/output density.

Dies 102 a or 102 b may represent a discrete chip made from asemiconductor material and may be, include, or be a part of a processor,memory, or ASIC in some embodiments. In some embodiments, anelectrically insulative material such as, for example, molding compoundor underfill material (not pictured) may partially or fully encapsulatea portion of dies 102 a or 102 b and/or die interconnect structures 106.The die interconnect structures 106 may be configured to route theelectrical signals between die 102 a, die 102 b, and/or the packagesubstrate 104.

The package substrate 104 may include electrical routing featuresconfigured to route electrical signals to or from dies 102 a and/or 102b. The electrical routing features may include, for example, tracesdisposed on one or more surfaces of the package substrate 104 and/orinternal routing features such as, for example, trenches, vias or otherinterconnect structures to route electrical signals through the packagesubstrate 104. In embodiments, electrical routing features may beembedded in one or more die interconnect regions 116. In embodiments,die interconnect region 116 may be a silicon patch. For example, in someembodiments, the package substrate 104 may include electrical routingfeatures (such as die bond pads 108), having the second surface finishapplied thereon, configured to receive the die interconnect structures106 and route electrical signals through one or more electricallyconductive lines embedded in die interconnect region 116, between die102 a, die 102 b, and/or the package substrate 104.

In some embodiments, the package substrate 104 is an epoxy-basedlaminate substrate having a core (e.g., central core 304 of FIG. 3)and/or build-up layers such as, for example, an Ajinomoto Build-up Film(ABF) substrate. The package substrate 104 may include other suitabletypes of substrates in other embodiments including, for example,substrates formed from glass, ceramic, or semiconductor materials.

The circuit board 122 may be a printed circuit board (PCB) composed ofan electrically insulative material such as an epoxy laminate. Forexample, the circuit board 122 may include electrically insulatinglayers composed of materials such as, for example,polytetrafluoroethylene, phenolic cotton paper materials such as FlameRetardant 4 (FR-4), FR-1, cotton paper and epoxy materials such as CEM-1or CEM-3, or woven glass materials that are laminated together using anepoxy resin prepreg material. Structures (not shown), for example, vias,may be formed through the electrically insulating layers to route theelectrical signals of either of dies 102 a or 102 b through the circuitboard 122. The circuit board 122 may be composed of other suitablematerials in other embodiments. In some embodiments, the circuit board122 is a motherboard (e.g., motherboard 502 of FIG. 5).

Package-level interconnects such as, for example, solder balls 112 maybe coupled to one or more lands (hereinafter “lands 110”) on the packagesubstrate 104 and one or more pads 114 on the circuit board 122 to formcorresponding solder joints that are configured to further route theelectrical signals between the package substrate 104 and the circuitboard 122. The solder balls 112 may be configured, for example, a in aball-grid array (BGA) arrangement. In some embodiments, the lands 110may have the first surface finish disposed thereon. The first surfacefinish may be comprised of any suitable electrically conductive materialsuch as metal including, for example, nickel (Ni), palladium (Pd), gold(Au), silver (Ag), copper (Cu), or combinations thereof. Other suitabletechniques to physically and/or electrically couple the packagesubstrate 104 with the circuit board 122 may be used in otherembodiments including, for example, land-grid array (LGA) structures andthe like.

FIG. 2 is an illustrative flow diagram of a portion of a packagesubstrate fabrication process 200 for applying a dual surface finish inaccordance with an embodiment of the present disclosure. FIG. 3 providescross-sectional views of selected operations illustrating stages in thepackage substrate fabrication process 200, in accordance with anillustrative embodiment. As a result, FIG. 2 and FIG. 3 will bedescribed in conjunction with one another. To aid in this description,the operations performed in FIG. 2 are referenced on the arrows movingfrom operation to operation in FIG. 3. In addition, not all referencenumbers are depicted in each operation in FIG. 3.

Package substrate fabrication process 200 may begin at operation 201where a package substrate may be provided for application of dualsurface finishes. The substrate provided may include a core (e.g.,central core 304 of FIG. 3) having dielectric layers (e.g., dielectriclayers 302 and 306 of FIG. 3) disposed thereon. The dielectric layersmay have patterned metal layers (e.g., patterned metal layer 308 of FIG.3) embedded therein. Generally, the patterned metal layer and any numberof layers below the patterned metal layer may be formed in any mannerknown in the art. For example, the patterned metal layer may be a topbuild-up layer formed with a semi-additive process (SAP). The dielectriclayer may be of any composition known in the art and may be applied overpatterned sub-surface level metal layers in any conventional manner. Forexample, in some embodiments, the dielectric layer may comprise apolymer (epoxy-based resin) that may have a silica filler to providesuitable mechanical properties that meet reliability requirements of thepackage.

The substrate may have a die side (e.g., dies side S1 of FIG. 3)configured to have one or more dies disposed thereon (e.g., 102 a and102 b of FIG. 1). In embodiments, the substrate may have one or morepads on which a die may be attached (e.g., 312 a-b and 314 a-b of FIG.3). In embodiments, the pads may include copper or any other suitableelectrically conductive material. The substrate may have one or more dieinterconnect regions embedded therein (e.g., die interconnect region 310of FIG. 3). The die interconnect region may have one or moreelectrically conductive pads disposed thereon (e.g., copper pad 311 ofFIG. 3). The pads of the die interconnect region may be electricallyconnected to surface level metal (e.g., pads 312 a-b of FIG. 3). The dieinterconnect region may have electrically conductive lines (notdepicted) embedded therein. The electrically conductive lines mayestablish an electrical connection between the electrically conductivepads disposed on the die interconnect region. In some embodiments, thedie interconnect region may include silicon, such as a silicon patch orbridge.

The substrate may have a land side (e.g., land side S2 of FIG. 3) withone or more lands disposed thereon (e.g., lands 316 a-d of FIG. 3). Theland side may be configured to attach to one or more circuit boards viathe one or more lands. A substrate such as that described above may beformed in any manner known in the art. For example, through a build-upprocess, such as a semi-additive process (SAP).

At operation 203, solder resist may be laminated on the die side and/orthe land side of the package substrate (e.g., die side solder resist 318a and land side solder resist 318 b of FIG. 3). Solder resist may beapplied to protect against oxidation and to prevent pad to pad bridging.Solder resist may be applied through a silk-screening, spraying, orvacuum lamination process. The solder resist may be any suitablematerial including, but not limited to, liquid photoimageable soldermask (LPSM) and/or dry film photoimageable solder mask (DFSM).

After the solder resist has been applied solder resist openings may beformed at operation 205. The solder resist openings may be formedthrough photolithography or any other suitable process. The solderresist opening may be formed over surface level metal contacts to enablea surface finish to be applied to the surface level metal contacts. Theopenings may also be formed to enable attachment of a die to the packagesubstrate (e.g., dies 102 a-b of FIG. 1) via the die side surface levelmetal contacts or the package substrate to be attached to a circuitboard (e.g., circuit board 122 of FIG. 1) via the land side surfacelevel metal contacts.

At operation 207, a protective laminate (e.g., protective laminate 320of FIG. 3) may be applied to the land side. The protective laminate maybe any suitable material, such as, but not limited to polyethyleneterephthalate (PET). The protective laminate may prevent deposition of asurface finish on the die side surface level metal contacts.

At operation 209, a first surface finish metal (e.g., surface finish 322of FIG. 3) is formed on exposed surfaces of the surface level metalcontacts (e.g., lands 316 a-d of FIG. 3) exposed by formation of thesolder resist openings. According to various embodiments, the firstsurface finish metal is of a different material composition than thelands. A variety of surface finish metal compositions or plated stacksmay be employed. In the illustrative embodiment depicted in FIG. 3, anelectroless plating process is used to form the surface finish 322comprising any suitable electrically conductive material such as metalincluding, for example, nickel (Ni), palladium (Pd), gold (Au), silver(Ag), copper (Cu), and combinations thereof. In an illustrativeembodiment, the surface finish 322 includes a 6-8 micron (μm) thicknickel layer.

At operation 211, the protective laminate on the die side (e.g.,protective laminate 320 of FIG. 3) may be removed and at operation 213 aprotective laminate (e.g., protective laminate 324 of FIG. 3) may beapplied to the land side. The protective laminate on the land side mayprevent deposition of a surface finish on the land side surface finish(e.g., surface finish 322 of FIG. 3).

At operation 215, a second surface finish (e.g., surface finish 326 ofFIG. 3) may be formed on the exposed surfaces of the surface level metalcontacts of the die side (e.g., pads 312 a-b and 314 a-b of FIG. 3).This second surface finish may be deposited through a process such as adirect immersion gold (DIG) process, an organic solderabilitypreservative (OSP) process, and/or an electroless palladium immersiongold (EPIG) process. In embodiments, the second surface finish may havea different chemical composition than the first surface finish. In someembodiments, this second surface finish may be comprised of gold,palladium, and/or imidazole, or an imidazole derivative, such as, butnot limited to, benzimidazole or phenylimidazole. In an illustrativeembodiment, the second surface finish may be less than 0.5 μm, 500nanometers (nm), thick. In OSP, DIG, or EPIG processes the secondsurface finish (e.g. surface finish 326) may range in thickness from 60nm to 300 nm. At operation 217, the protective laminate on the land side(e.g., protective laminate 324 of FIG. 3) may be removed.

In some embodiments, the critical dimension (CD), or minimum lateralwidth, of a surface finish at a connection point may be at least aslarge as the largest diameter of a pad (e.g., pads 312 a-b and 314 a-bof FIG. 3); however, because the second surface finish may be less than500 nm thick, the lateral expansion of the surface finish metal, on thedie side pads, is reduced allowing a reduction in the space betweenadjacent pads. For example, where connection points have a pitch (e.g.,bump pitch), this minimized lateral expansion of the surface finish mayenable a 55 μm bump pitch or less where the pad size is 43 μm whichwould provide higher I/O routing density than is possible with thecurrent state of the art.

While the above process describes application of the first surfacefinish to the land side followed by application of the second surfacefinish to the die side, this process may be performed in an oppositeorder as well. For example, the second surface finish may be applied tothe die side of the package substrate followed by application of thefirst surface finish to the land side of the package substrate.

FIG. 4 is an illustrative flow diagram of an assembly process 400utilizing a package substrate with dual surface finish in accordancewith an embodiment of the present disclosure. Such a package substratemay be produced through the illustrative method described in referenceto FIG. 2, above, and may be depicted in FIG. 3.

Assembly process 400 begins at operation 401 with receiving a packagesubstrate with exposed surface finish at predetermined substrateconnection points. As such, in the illustrative embodiments, no solderresist is present on the surface of the package substrate and no solderis placed on the surface finish prior to coupling a chip to the packagesubstrate. An illustrative package substrate may be depicted in FIG. 3.

At operation 402, an IC chip may be received with solder bumps disposedon the chip connection points. While the IC chip may generally be of anyconventional type, in a particular embodiment, the IC chip may be aprocessor, such as a microprocessor, having a large I/O count. In anembodiment, the chip I/O and power solder bumps may have a pitch of 55μm, as described above. At operation 410, the IC chip may be alignedwith the surface finished substrate to have the soldered IC chipconnection points aligned with the surface finished substrate connectionpoints. The chip side solder is then alloyed at operation 420 to affixthe chip to the substrate connection points which completes thepackaging 430.

Embodiments of the present disclosure may be implemented into a systemusing any suitable hardware and/or software to configure as desired.FIG. 5 schematically illustrates a computing device that includes apackage substrate as described herein, such as that depicted by FIG. 3,in accordance with some embodiments. The computing device 500 may housea board such as motherboard 502. The motherboard 502 may include anumber of components, including but not limited to a processor 504 andat least one communication chip 506. The processor 504 may be physicallyand electrically coupled to the motherboard 502. In someimplementations, the at least one communication chip 506 may also bephysically and electrically coupled to the motherboard 502. In furtherimplementations, the communication chip 506 may be part of the processor504.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe motherboard 502. These other components may include, but are notlimited to, volatile memory (e.g., DRAM), non-volatile memory (e.g.,ROM), flash memory, a graphics processor, a digital signal processor, acrypto processor, a chipset, an antenna, a display, a touchscreendisplay, a touchscreen controller, a battery, an audio codec, a videocodec, a power amplifier, a global positioning system (GPS) device, acompass, a Geiger counter, an accelerometer, a gyroscope, a speaker, acamera, and a mass storage device (such as hard disk drive, compact disk(CD), digital versatile disk (DVD), and so forth).

The communication chip 506 may enable wireless communications for thetransfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 506 may implement anyof a number of wireless standards or protocols, including but notlimited to Institute for Electrical and Electronic Engineers (IEEE)standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards(e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) projectalong with any amendments, updates, and/or revisions (e.g., advanced LTEproject, ultra mobile broadband (UMB) project (also referred to as“3GPP2”), etc.). IEEE 802.16 compatible BWA networks are generallyreferred to as WiMAX networks, an acronym that stands for WorldwideInteroperability for Microwave Access, which is a certification mark forproducts that pass conformity and interoperability tests for the IEEE802.16 standards. The communication chip 506 may operate in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network.The communication chip 506 may operate in accordance with Enhanced Datafor GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN),Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN(E-UTRAN). The communication chip 506 may operate in accordance withCode Division Multiple Access (CDMA), Time Division Multiple Access(TDMA), Digital Enhanced Cordless Telecommunications (DECT),Evolution-Data Optimized (EV-DO), derivatives thereof, as well as anyother wireless protocols that are designated as 3G, 4G, 5G, and beyond.The communication chip 506 may operate in accordance with other wirelessprotocols in other embodiments.

The computing device 500 may include a plurality of communication chips506. For instance, a first communication chip 506 may be dedicated toshorter range wireless communications such as Wi-Fi and Bluetooth and asecond communication chip 506 may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, andothers.

The processor 504 of the computing device 500 may be packaged in an ICassembly (e.g., IC assembly 100 of FIG. 1) that includes a packagesubstrate as described herein. For example, the circuit board 122 ofFIG. 1 may be a motherboard 502 and the processor 504 may be a die 102mounted on a package substrate 104 as described herein. The packagesubstrate 104 and the motherboard 502 may be coupled together usingpackage-level interconnects as described herein. The term “processor”may refer to any device or portion of a device that processes electronicdata from registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory.

The communication chip 506 may also include a die (e.g., die 102 ofFIG. 1) that may be packaged in an IC assembly (e.g., IC assembly 100 ofFIG. 1) that includes a package substrate 104 as described herein. Infurther implementations, another component (e.g., memory device or otherintegrated circuit device) housed within the computing device 500 mayinclude a die (e.g., die 102 of FIG. 1) that may be packaged in an ICassembly (e.g., IC assembly 100 of FIG. 1) that includes a packagesubstrate 104 as described herein.

In various implementations, the computing device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra-mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 500 may be any other electronic device that processes data.

Examples

According to various embodiments, the present disclosure describes anumber of examples. Example 1 is a method of forming an integratedcircuit (IC) package substrate comprising: depositing a first laminationlayer on a first side of the package substrate and a first surfacefinish on one or more electrical contacts disposed on a second side ofthe package substrate, wherein the first side is disposed opposite thesecond side and the first lamination layer is to prevent deposition ofthe first surface finish on one or more electrical contacts disposed onthe first side; removing the first lamination layer from the first sideof the package substrate to expose the one or more electrical contactsdisposed on the first side; depositing a second lamination layer on thesecond side of the package substrate and a second surface finish on theone or more electrical contacts disposed on the first side of thepackage substrate, wherein the second lamination layer is to preventdeposition of the second surface finish on the one or more electricalcontacts disposed on the second side; and removing the second laminationlayer from the second side of the package substrate.

Example 2 may include the subject matter of Example 1, wherein thedepositing of the first surface finish is accomplished by a DirectImmersion Gold (DIG) process and the one or more electrical contactsdisposed on the second side comprise die bond pads.

Example 3 may include the subject matter of Example 1, wherein thedepositing of the first surface finish is accomplished by an ElectrolessPalladium Immersion Gold (EPIG) process and the one or more electricalcontacts disposed on the second side comprise die bond pads.

Example 4 may include the subject matter of Example 1, wherein thedepositing of the first surface finish is accomplished by an OrganicSolderability Preservative (OSP) process and the one or more electricalcontacts disposed on the second side comprise die bond pads.

Example 5 may include the subject matter of any one of Examples 1-4,wherein depositing the second surface finish is accomplished using anelectroless plating process and the one or more electrical contactsdisposed on the second side comprise one or more lands.

Example 6 may include the subject matter of any one of Examples 1-4,wherein depositing the second surface finish comprises depositing nickel(Ni) and the one or more electrical contacts disposed on the second sidecomprise one or more lands.

Example 7 may include the subject matter of Example 6, whereindepositing the second surface finish further comprises depositing one orboth of palladium or gold.

Example 8 may include the subject matter of Example 7, whereindepositing the second surface finish comprises depositing gold using anelectroless nickel-immersion gold (ENIG+EG) process.

Example 9 is a package substrate comprising: a first side including oneor more lands, the one or more lands having a first surface finishdisposed on the one or more lands; and a second side disposed oppositeto the first side, the second side having die interconnect region, thedie interconnect region having one or more electrical routing featuresembedded therein, the one or more electrical routing features having asecond surface finish disposed on, and in direct contact with, the oneor more electrical routing features, wherein the electrical routingfeatures are configured to bond with die interconnect structures of oneor more dies and the second surface finish has a different chemicalcomposition than the first surface finish.

Example 10 may include the subject matter of Example 9, wherein thefirst surface finish is an outermost surface finish on the one or morelands and the second surface finish is an outermost surface finish onthe one or more electrical routing features.

Example 11 may include the subject matter of Example 9, wherein thesecond surface finish is imidazole or an imidazole derivative.

Example 12 may include the subject matter of Example 9, wherein thesecond surface finish is gold.

Example 13 may include the subject matter of Example 9, wherein thesecond surface finish is a combination of palladium and gold.

Example 14 may include the subject matter of Example 9, wherein thesecond surface finish has a thickness of less than or equal to 500nanometers.

Example 15 may include the subject matter of Example 9, wherein thefirst surface finish comprises nickel (Ni).

Example 16 may include the subject matter of Example 15, wherein thefirst surface finish further comprises one or both of palladium (Pd) orgold (Au).

Example 17 may include the subject matter of Example 9, wherein the dieinterconnect region is disposed in a dielectric layer.

Example 18 may include the subject matter of Example 9, wherein the dieinterconnect region comprises a silicon bridge.

Example 19 may include the subject matter of Example 9, wherein the oneor more electrical routing features of the die interconnect region routeelectrical signals between a first die connected to the packagesubstrate and a second die connected to the package substrate.

Example 20 is a package assembly comprising: an integrated circuit (IC)chip having one or more input/output (I/O) connection points and one ormore power connection points; and a package substrate including: a firstside including one or more lands, the one or more lands having a firstsurface finish disposed on the one or more lands; and a second sidedisposed opposite to the first side, the second side having a siliconconnecting region embedded therein, the silicon connecting region havingone or more electrical routing features embedded therein, the one ormore electrical routing features having a second surface finish disposedon, and in direct contact with, the one or more electrical routingfeatures, wherein the second surface finish has a different chemicalcomposition than the first surface finish and the second surface finishis electrically connected to the one or more I/O connection points orthe one or more power connection points.

Example 21 may include the subject matter of Example 20, wherein the ICchip is a processor.

Example 22 may include the subject matter of Example 20, furthercomprising one or more of an antenna, a display, a touchscreen display,a touchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, aGeiger counter, an accelerometer, a gyroscope, a speaker, or a cameracoupled with the circuit board, wherein the package assembly is part ofa laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, apersonal digital assistant (PDA), an ultra-mobile PC, a mobile phone, adesktop computer, a server, a printer, a scanner, a monitor, a set-topbox, an entertainment control unit, a digital camera, a portable musicplayer, or a digital video recorder.

Example 23 is an apparatus for forming an integrated circuit (IC)package substrate comprising: means for depositing a first laminationlayer on a first side of the package substrate and a first surfacefinish on one or more electrical contacts disposed on a second side ofthe package substrate, wherein the first side is disposed opposite thesecond side and the first lamination layer is to prevent deposition ofthe first surface finish on one or more electrical contacts disposed onthe first side; means for removing the first lamination layer from thefirst side of the package substrate to expose the one or more electricalcontacts disposed on the first side; means for depositing a secondlamination layer on the second side of the package substrate and asecond surface finish on the one or more electrical contacts disposed onthe first side of the package substrate, wherein the second laminationlayer is to prevent deposition of the second surface finish on the oneor more electrical contacts disposed on the second side; and means forremoving the second lamination layer from the second side of the packagesubstrate.

Example 24 may include the subject matter of Example 23, wherein themeans for depositing the first surface finish further comprises meansfor performing a Direct Immersion Gold (DIG) process and the one or moreelectrical contacts disposed on the second side comprise die bond pads.

Example 25 may include the subject matter of Example 23, wherein themeans for depositing the first surface finish further comprise means forperforming an Electroless Palladium Immersion Gold (EPIG) process andthe one or more electrical contacts disposed on the second side comprisedie bond pads.

Example 26 may include the subject matter of Example 23, wherein themeans for depositing the first surface finish further comprise means forperforming an Organic Solderability Preservative (OSP) process and theone or more electrical contacts disposed on the second side comprise diebond pads.

Example 27 may include the subject matter of any one of Examples 23-26,wherein the means for depositing the second surface finish furthercomprise means for performing an electroless plating process and the oneor more electrical contacts disposed on the second side comprise one ormore lands.

Example 28 may include the subject matter of any one of Examples 23-26,wherein the means for depositing the second surface finish furthercomprise means for depositing nickel (Ni) and the one or more electricalcontacts disposed on the second side comprise one or more lands.

Example 29 may include the subject matter of Example 28, wherein themeans for depositing the second surface finish further comprises meansfor depositing one or both of palladium or gold.

Example 30 may include the subject matter of Example 29, wherein meansfor depositing the second surface finish comprises means for depositinggold using an electroless nickel-immersion gold (ENIG+EG) process.

Example 31 may include the apparatus of 23, wherein the one or moreelectrical contacts disposed on the second side comprise die bond padsand the means for depositing the first surface finish further compriseone of: means for performing a Direct Immersion Gold (DIG) process,means for performing an Electroless Palladium Immersion Gold (EPIG)process, or means for performing an Organic Solderability Preservative(OSP) process.

The above description of illustrated implementations, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments of the present disclosure to the precise formsdisclosed. While specific implementations and examples are describedherein for illustrative purposes, various equivalent modifications arepossible within the scope of the present disclosure, as those skilled inthe relevant art will recognize.

These modifications may be made to embodiments of the present disclosurein light of the above detailed description. The terms used in thefollowing claims should not be construed to limit various embodiments ofthe present disclosure to the specific implementations disclosed in thespecification and the claims. Rather, the scope is to be determinedentirely by the following claims, which are to be construed inaccordance with established doctrines of claim interpretation.

1. (canceled)
 2. A method for providing a package substrate, comprising:providing one or more lands on a first side of the package substrate,the package substrate including a second side opposite the first side;disposing one or more die bond pads on the second side, includingproviding the one or more die bond pads in a die interconnect region ofthe package substrate, wherein the die interconnect region comprises asilicon bridge; depositing a first surface finish on at least one of theone or more lands; and depositing a second surface finish on at leastone of the die bond pads; wherein the second surface finish has adifferent chemical composition than the first surface finish.
 3. Themethod of claim 2, wherein disposing the die bond pads includesdisposing at least one die bond pad on the silicon bridge.
 4. The methodof claim 2, wherein the first surface finish is an outermost surfacefinish on the one or more lands and the second surface finish is anoutermost surface finish on the one or more die bond pads features. 5.The method of claim 2, wherein the second surface finish is imidazole oran imidazole derivative.
 6. The method of claim 2, wherein the secondsurface finish is gold (Au).
 7. The method of claim 2, wherein thesecond surface finish is a combination of palladium (Pd) and gold (Au).8. The method of claim 2, wherein the second surface finish has athickness of less than or equal to 500 nanometers.
 9. The method ofclaim 2, wherein the first surface finish comprises nickel (Ni).
 10. Themethod of claim 9, wherein the first surface finish further comprisesone or both of palladium (Pd) or gold (Au).
 11. A method for providingan assembly, comprising: disposing a silicon bridge in a substrate ofthe assembly; disposing a plurality of lands on a first side of thesubstrate; providing a plurality of die bond pads, including disposingat least one die bond pad on the silicon bridge and disposing at leastone other die bond pad on a second side of the substrate, the secondside of the substrate opposite the first side; depositing a firstsurface finish on at least one of the lands; depositing a second surfacefinish on at least one of the die bond pads, wherein the second surfacefinish has a different chemical composition than the first surfacefinish; extending a first set of interconnect structures between a firstdie of the assembly and the die bond pads; and extending a second set ofinterconnect structures between a second die of the assembly and the diebond pads.
 12. The method of claim 11, further comprising: disposingrouting features in the silicon bridge, to electrically couple the firstdie and the second die.
 13. The method of claim 12, further comprising:disposing routing features in the substrate, to electrically couple thefirst die and the second die.
 14. The method of claim 11, wherein thefirst surface finish is an outermost surface finish on the one or morelands and the second surface finish is an outermost surface finish onthe one or more die bond pads features.
 15. The method of claim 11,wherein the second surface finish is imidazole or an imidazolederivative.
 16. The method of claim 11, wherein the second surfacefinish is gold (Au).
 17. The method of claim 11, wherein the secondsurface finish is a combination of palladium (Pd) and gold (Au).
 18. Themethod of claim 11, wherein the second surface finish has a thickness ofless than or equal to 500 nanometers.
 19. The method of claim 11,wherein the first surface finish comprises nickel (Ni).
 20. The methodof claim 19, wherein the first surface finish further comprises one orboth of palladium (Pd) or gold (Au).
 21. The method of claim 11, whereinthe first and second dies comprise integrated circuits (IC).